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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB763 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *Good Linearity of hFE *High Collector Power Dissipation *Complement to Type 2SD858 APPLICATIONS *Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT -60 V -60 V -5 V -5 A -10 A 60 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB763 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V -1.6 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -700 A ICES Collector Cutoff Current VCE= -60V; VBE= 0 -400 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton Turn-On Time w w P 120-250 scs .i w IC= -1A; VCE= -4V IC= -3A; VCE= -4V .cn mi e 40 20 0.2 1.4 -1 mA 250 s IC= -6A; IB1= -IB2= -0.6A s toff Turn-Off Time hFE-1 Classifications R 40-90 Q 70-150 isc Websitewww.iscsemi.cn 2 |
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